2D materials: Moiré engineering and dislocation theory converge

Researchers at INAC working with colleagues from the University of Illinois recently made new links between the moiré patterns in 2D materials and dislocation theory. It appears that the moiré patterns are merely optical phenomena. However at the scale of an atom, the patterns appear when layers are stretched, compressed, twisted, or moved out of alignment with each other. Therefore, the patterns can be considered dislocation networks between the layers.

Even more exciting is the fact that lines can be written into the moiré patterns. The lines could function like “tracks” that could be assembled to create nanometric circuits that would push miniaturization to its ultimate limits. The researchers are pursuing their work thanks to funding secured in the US.

Contact: pascal.pochet@cea.fr

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