News : Research

February 03 2014

MEMS and NEMS: releasing moving parts faster

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Researchers at Leti have developed a simulator to validate the position and size of the holes used to remove, via etching, the sacrificial material used to temporarily support structures during the fabrication of MEMS and NEMS—and release the systems’ moving parts. The holes substantially shorten a critical phase in the process of releasing moving parts, […] >>

February 03 2014

Air pollution: small doses most harmful to DNA

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Toxicology studies often look at the effects of exposure to high doses of pollutants. However, are the effects underestimated for smaller doses? INAC recently examined how polycyclic aromatic hydrocarbons (PAHs)—present in emissions from motor vehicles and heating systems—damage DNA. The researchers observed the formation of covalent adducts, which modify gene sequences and participate in the […] >>

February 03 2014

A high-spin polymer gets synthesized

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Researchers from INAC and the Warsaw University of Technology have synthesized a polymer that spins when immersed in a solution. The material, made from a polyaniline-derived polymer, is stable at ambient temperature. The spin remains moderate (S=2), but marks a first for a linear polymer. And, given the polymer’s current tangled-chain structure, there’s ample room […] >>

February 03 2014

Miniature-antenna quality gets a boost

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Today’s mobile devices boast increasingly-miniaturized antennas. But tiny antennas are plagued by losses—detrimental to performance. In an effort to solve the problem, researchers from Leti and IETR recently devoted two Ph.D. dissertations to lanthanum titanate, a new perovskite oxide known for its high permittivity. And the results are promising. Antennas made using the material offer […] >>

February 03 2014

Quantum simulation sheds new light on physics of advanced transistors

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Researchers at INAC and Leti recently developed a quantum simulation code that is providing groundbreaking insights into the physics of advanced FD-SOI and Tri-gate transistors. What makes the researchers’ work so significant is that semi-traditional simulation models do not factor in the quantum effects that play an increasing role as transistor sizes trend towards the […] >>
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