News : Electronics and microelectronics - Optoelectronics
January 01 2023
Development of Smart Beamforming Architectures for 6G Telecommunication Systems
Over the past 20 years, wireless communication systems have continued to evolve and offer new services. Today, the success is such that the frequency bands below 10GHz are saturated and we are now turning to millimeter band frequencies. These frequencies offer the possibility to develop systems with higher data rates. However, they require beamforming to […] >>
January 01 2023
Study of sidewall physical mechanisms involved in GaN µ-LEDs performance
In the Optics and Photonics division of CEA-LETI, The Emissive Components Laboratory designs and fabricates micro-displays based on GaN micro-LEDs. One of the major issue of GaN µ-LEDs is the decrease of their efficiency with the size reduction. In literature, this degradation is attributed to SRH (Shockley-Read-Hall) non-radiative recombinations on pixel sidewalls, in defects induced […] >>
January 01 2023
Localized selective deposition of oxides for microelectronics
In order to reduce the manufacturing costs of integrated circuits and continue their miniaturization, disruptive approaches based on the use of selective deposition processes are now being considered in addition to photolithography. Recent developments are mostly linked to the use of atomic layer deposition (ALD) which is a very suitable technique for the development of […] >>
January 01 2023
Study, modeling and development of infrared detectors in the range 8-12µm based on antennas and nano diodes
The thesis concerns the study, modeling and development of infrared detectors based on antennas and MIM (Metal-Insulator-Metal) nanodiodes in the range 8-12 µm. These devices will operate at room temperature and will be manufactured in the CEA-LETI clean room. The student began his thesis work with a theoretical study of the behavior of dielectric and […] >>
January 01 2023
Addressing retention and write bottlenecks for sub-10nm MRAM magnetic memory cells
Magnetic random access memories (MRAMs) are now on the market, in FPGAs or cache memory blocks. The concept of Perpendicular Shape Anisotropy MRAM (PSA) has been proposed to expand the MRAM market: the usual ultra-thin storage layer being replaced by a vertical magnetic pillar, allowing retention to be maintained at <10nm size and at high […] >>