News : Emerging materials and processes for nanotechnologies and microelectronics

Non-volatile magnetic memories (MRAMs), such as STT-MRAMs (Spin-torque Transfer MRAMs), appear to be extremely promising devices for reducing the energy consumption of memories. In this context, a very strong spin-orbit coupling at room temperature has been demonstrated in 2D heterostructures of Tellurium-based chalcogenide materials opening the way to new energy-efficient devices. On the other hand, […] >>

MOS-HEMT devices have erased a lot of interest in the state of art and specifically for compact and high power density applications. Thanks to the presence of a high bi-dimensional gas electron (2deg) at the AlGaN/GaN heterojunction and the very promising GaN thermal resistance and high mobility, these transistors are capable of supporting high currents […] >>

Today, memories are once again a priority for two reasons: data production is growing exponentially. Data storage and transfer consumes up to 90% of the energy in computing systems. Non-volatile memories, which retain information when not powered, are needed to limit energy consumption. Ferroelectric memories (FeRAM or FRAM) are one of the emerging non-volatile memory […] >>

In order to reduce the manufacturing costs of integrated circuits and continue their miniaturization, disruptive approaches based on the use of selective deposition processes are now being considered in addition to photolithography. Recent developments are mostly linked to the use of atomic layer deposition (ALD) which is a very suitable technique for the development of […] >>

For their atomic thinness and exceptional electronic properties, 2D materials like graphene and transition metal dichalcogenides (TMD) are promising materials to build new compact and energy efficient electronic and spintronic devices. A key property of those materials is their two dimensional character which makes them highly sensitive to their environment. Thus, it offers the key […] >>