News : Solid state physics, surfaces and interfaces

January 01 2023

Simulation of the performances of field effect transistors based on 2D materials

As the performances of the transistor are approaching their physical limits, developing semiconductor technology with novel concepts and materials is a major focus of the microelectronics research and industry. In recent years, MOSFETs fabricated with semiconducting 2D transition metal dichalcogenide (TMD) channels have been identified as promising candidates to reach the ultimate gate length scaling, […] >>

January 01 2023

Impact of mechanical properties of thin layers in SmartCut technology.

The SmartCut technology is nowdays widely used on the manufacture of innovative substrates such as SOI (Silicon-on-Insulator). The fundamental physical phenomena underlying this process are still being actively studied. In particular, the catastrophic fracture step, which allows the transfer of a very thin layer of a donor substrate onto a base or receiver substrate. An […] >>

January 01 2023

Unconventional topological spin textures in spintronics

This thesis focuses on the study of unconventional topological spin textures present in antiferromagnetic thin film materials. In the field of spintronics, spin correlations have attracted considerable attention, facilitating progress in fundamental physics and the development of new applications. Some effects, such as the topological Hall effect, are related to the specific local arrangement of […] >>

January 01 2023

Study of the anisotropy of dopant and compositional gradients in the reference ternary alloy for infrared detection

This thesis concerns the field of HgCdTe infrared detectors for astrophysical applications, for which the Infrared Laboratory of CEA -Leti is a world leader. The student will join the infrared laboratory which includes the entire detector manufacturing process. He will produce the samples using the technological means of elaboration available in the Leti clean room. […] >>

January 01 2023

2D layers of chalcogenide materials growth by van der Waals epitaxy for frugal electronics

Non-volatile magnetic memories (MRAMs), such as STT-MRAMs (Spin-torque Transfer MRAMs), appear to be extremely promising devices for reducing the energy consumption of memories. In this context, a very strong spin-orbit coupling at room temperature has been demonstrated in 2D heterostructures of Tellurium-based chalcogenide materials opening the way to new energy-efficient devices. On the other hand, […] >>
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