First-ever 600 V/100 A GaN demonstrator transistor for power electronics

Power components now have their own transistor. Researchers at Leti completed the first-ever 600 V/100 A normally-off MIS-HEMT (metal-insulator-semiconductor high-electron-mobility transistor) offering performance compatible with the requirements of power electronics. In addition, the transistor can operate at 200 °C and can be manufactured at a reasonable cost. A 3 micron–4 micron GaN layer was deposited onto a 200 mm silicon wafer to boost voltage to 600 V. The GaN layer was used successfully thanks to a specific interface between the silicon and GaN layers. The transistor also offers higher operating frequencies than today’s power components, making it a prime candidate for energy conversion applications.

Contact: rene.escoffier@cea.fr

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