Gentle metallization for porous silicon

Metallizing porous silicon no longer requires a physical process or CVD. Researchers from the CEA and the nanochemistry lab at CPE Lyon have developed a gentle metallization method using a process that is more effective and less costly than current solutions.

The porous silicon is immersed in an ionic liquid bath containing an organometallic precursor. The liquid is soaked up by the material and the precursor precipitates the nanoparticles, which are deposited inside the material’s pores. Metallization takes place at temperatures between 50°C and 100°C.

The process was used successfully with copper, cobalt, palladium, and platinum, and is mature enough for work to begin on integrating metallized porous silicon into processes. The method could potentially be used for chromatography microcolumns, gas sensors, and fuel-cell membranes.

Contacts: paul.haumesser@cea.fr; frederic-x.gaillard@cea.fr

Facebook

Twitter