Large-scale two-dimensional MoSe2 production with no tape!

Researchers at INAC recently synthesized homogeneous three-atomic-layer MoSe2 on a large scale using molecular beam epitaxy. Like other transition metal dichalcogenides (TMDs), MoSe2 is a two-dimensional semiconductor that offers vast potential for applications in electronics, spintronics, and optoelectronics. Producing the material by exfoliation from bulk crystal using adhesive tape does not deliver consistent enough quality and the technique cannot be used for volume production.

INAC’s technique delivers fine control of the number of layers deposited and complete coverage of the substrate, resulting in desirable structural and electrical properties and homogeneous 2D layers that were verified using several characterization techniques.

Contact: matthieu.jamet@cea.fr

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