LEDs in the race against mercury for UV-C emission

A recent paper by researchers from Irig and Institut Néel presents a method for creating quantum wells in GaN/AlGaN core-shell structures on GaN for UV emission enhancement.
The secret of the structures lies in their very small number of cracks—which behave like non-radiative centers, trapping charge carriers.
Because of the difference between the two materials’ mesh parameters, the cracks are created beyond a certain elastic energy per unit area threshold.
The researchers used an epitaxial growth process in which the aluminum content of the AlGaN increases gradually to avoid reaching this threshold.
The quantum wells, embedded in nanowires, are of interest to research due to their potential to improve UV LED efficiency and, possibly, replace mercury disinfection lamps.

Contact: joel.eymery@cea.fr

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