Micro-Raman spectroscopy used to characterize graphene-silicon transistor

Raman spectroscopy is already a technique of choice for the characterization of carbon-based structures. Now, it is also known to be effective on hybrid graphene-silicon MOS transistors made using graphene grown on silicon carbide.
Researchers from Leti, INAC, and the University of Montpellier mapped the system’s graphene areas, revealing the presence of graphene between the contacts. They also estimated the number of layers in each area and determined their structure.
The research was conducted under the Grafonics project, funded by the French National Research Agency (ANR). The goal is to pave the way for a major technology shift towards graphene, either to replace silicon in CMOS applications or to be used alongside silicon in hybrid electro- and photostimulable systems.

Contact: denis.rouchon@cea.fr

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