Micron-level accuracy in die-to-wafer bonding

CEA-Leti and equipment manufacturer SET have developed a new hybrid die-to-wafer bonding process that boasts micron-level accuracy. The solidity of the bond is achieved using the molecular force between the copper and oxide surfaces alone. Several patents have already been filed for this now-mature technology, which will soon be brought to market in a new machine developed by SET.

This bonding method is crucial for the heterogeneous 3D circuits just over the horizon. Component miniaturization means that existing microbead assembly technologies will become obsolete, since they limit interconnection density. Possible applications for the new technology include AI processors that combine LEDs or image sensors, memory, and CMOS circuits.

Contact: emilie.bourjot@cea.fr

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