Miniaturization record for single-electron CMOS transistor

Single-electron transistors (SETs) measuring just a few nanometers have been made by several teams of researchers around the world. However, none had managed to do it on CMOS and achieve operation at ambient temperature. Researchers from Leti and INAC have been successful on both fronts, with a transistor inside a 3.4 nm diameter silicon nanowire that operates from low up to ambient temperatures.

The research, which was published in Nanoletters, is crucial in that single-electron transistors have the potential to slash circuit energy consumption and could even be used for quantum processors. The researchers are currently working on reducing the variability of their transistor, even if that means compromising on miniaturization.

Contact: marc.sanquer@cea.fr

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