MRAM: Microelectronics industry adopts spintronics

The world’s leading foundries—including Samsung, TSMC, and GlobalFoundries—announced early this year that they would be starting volume manufacturing of MRAM memory, marking a major milestone. Among MRAM’s many benefits: It costs less to manufacture than embedded flash memory, is extremely energy efficient, and offers high communication speeds and a virtually-infinite number of cycles.

Spintec’s research was a big contributor to this major step forward. According to a 2016 study by the CEA Documentation and Marketing Research Department, the lab’s research is at the international state of the art. Spintec has filed key patents on perpendicular magnetic anisotropy at transition metal/oxide interfaces (2006, 2008), spin-orbit couple (2010), and MRAM with perpendicular shape anisotropy (2017). Spintec’s advances are helping shape tomorrow’s MRAM technologies today!

Contact: bernard.dieny@cea.fr

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