Nanometric deformation measurement just got even more accurate

The Nanocharacterization Platform has just achieved a world first: measuring SOI transistor deformation with spatial resolution under 2 nm. The breakthrough was made possible thanks to the addition of precession electron diffraction to the Titan transmission electron microscope. A set of lenses was used to rotate the beam, increasing the number of diffraction spots. The accuracy of deformation measurements improved from 5×10-3 to 3×10-4.
The deformation of nanoelectric materials is used increasingly to improve charge-carrier mobility. The new measurement capabilities, when used with finished element simulation, will provide more detailed interpretations without the bias created by relaxing the sample (just 100 nm thick).

Contacts: nicolas.bernier@cea.fr ;  jean-luc.rouviere@cea.fr

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