OxRAM memory almost ready to scale up for manufacturing

Rapid advances in resistive oxide memory (OxRAM) could soon put the technology on manufacturers’ production lines.
In a recent demonstration by CEA-Leti, 16-kbit arrays were successfully fabricated on 300 mm, 28 nm FDSOI wafers and run for 100,000 cycles with zero memory-point failures.
OxRAM is affordable, high-density, and easy to manufacture. This latest demonstration also proves it is robust and reliable. CEA-Leti introduced a tiny amount of silicon into the active metal (hafnium oxide), an innovation that makes it possible to use a lower voltage, which is easier on the 28 nm transistors closest to the memory.
Several patents were filed as a result of this research and talks are underway with potential manufacturers.

Contact: camille.giroud@cea.fr

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