Atomic layer growth of 2D thin films for RF-switches

In the Leti campus, the silicon technology division aims to define, develop, and process materials for advanced electrical device integration. In particular, we are studying advanced thin film deposition, on vacuum equipment and at angstrom scale. This post-doctoral position is part of a project including multiple French laboratories; the objective is to explore the applicative potential of transition metal dichalcogenides (TMD) for non-volatile radio frequency switches. This project includes the simulation, the realization of devices, and their electrical tests, and Leti is in charge of material processing.

We study the growth of atomically thin 2D-TMD layers. They are two-dimensional crystals with an MS2 chemical composition, where M is a transition metal atom, and X is a sulfur atom. They have attracted much attention for a wide range of applications in nanoelectronics, photonics, catalysis and sensing, to name a few. The deposition of these films is realized in vacuum chemical chambers, on 200 or300mm silicon wafers, using the well-known technics of atomic layer deposition (ALD). It is a thin-film deposition technique based on the sequential use of a gas-phase chemical process, by the exposition of the growth surface with a chemical precursor including the metal, and a thiol molecule. We achieve the film characterization, in-situ during growth without air-break, using and advanced X-ray surface analysis, coupled with a residual gas analyzer (RGA).

We are seeking for an outstanding research applicant who will study the growth of 2D materials by ALD, and the in-situ characterization of the thin films. This will imply to manage the technical monitoring of the deposition equipment, elaborate experiments, and achieve the advanced characterizations of the films using X-ray technics. Scientific results will be published in advanced journal.

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