Reversing magnetization with an electric field

Researchers at Irig working with colleagues in Romania* recently discovered that the magnetization of an MRAM-cell-type nanostructure can be reversed by applying an electric field rather than an electric current. Their results should lead to some exciting developments.
When an electric field is applied, the write speed is ten times faster and uses 100 times less energy compared to standard STT-MRAM. And, because Joule effect losses are reduced to a similar degree, the memory stack doesn’t get as hot, which is good news for STT-MRAM reliability and robustness.
Simulation was used to determine the optimal switching parameters, which were then confirmed experimentally.
The research, which is ongoing, could lead to the design of innovative components.
A patent has also been filed.

* Babes-Bolyai University and Technical University (Cluj-Napoca, Romania)

Contact: liliana.buda@cea.fr

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