News :
October 18 2019
Magnetic field sensor based on magnetic tunnel junction
The Spintec laboratory supports the R&D of Crocus-Technology, a company that develops magnetic field sensors. Optimizing the performance of these sensors, based on magnetic tunnel junctions, requires research on materials, micromagnetic configurations and junction transport properties, including magnetic and electrical noise. The purpose of the internship is to find ways to improve the sensors through […] >>
October 18 2019
Magnetically actuated artificial membranes for biotechnology
New biocompatible magneto-elastic membranes have recently been developed at SPINTEC, based on the integration of magnetic microparticles previously investigated in biological studies [1]. Our earlier studies aimed at cancer cells destruction, through the low frequency magneto-mechanical vibrations of the particles dispersed among the cells [2). Here, on the contrary, magnetic particles are patterned in an […] >>
October 18 2019
Probing nonlinear spin fluctuations at the nanoscale using spin-dependent transport
In the field of spintronics, spin correlations due to sd exchange and spin-orbit interactions have attracted considerable attention, facilitating advances in basic physics along with the emergence of closely related applications. One of the related effect is known as the inverse spin Hall effect (ISHE), and is commonly used for spin-charge conversion in devices. The […] >>
October 18 2019
Study of 2D materials growth using Transmission Electron Microscopy
Two-dimensional atomically thin materials such as graphene are very promising materials for future applications. Among them, 2D transition metal dichalcogenides (2D-TMDs), such as MoS2 and MoSe2, have attracted tremendous attention for their exceptional optical and electronic properties ranging from semiconducting, to metallic or superconducting. The physical properties of these 2D layers are first defined by […] >>
October 18 2019
Valleytronics using light, electric fields and heat in 2D transition metal dichalcogenides
In the monolayer limit, two dimensional (2D) transition metal dichalcogenides (2H-MX2, with M=Mo, W and X=S, Se) are semiconductors with a sizeable (1-2 eV) and direct electronic bandgap as well as (degenerate) valleys at the K+/K- corners of the Brillouin zone. Beyond their use as classical semiconductors, this peculiar electronic structure opens new and exciting […] >>