News :
October 22 2019
Magnetic 3D topological insulators
Nanostructures of the magnetic 3D topological insulators MnBi2Te4 and MnBi4Te7 are candidates to realize novel chiral electronic states, similar to the quantum Hall state, but without the need of magnetic fields. The modification of the band structure by the exchange interaction is also predicted to generate axion insulators, with topological properties that can be tuned […] >>
October 22 2019
Magnetic skyrmion in ultrathin nanostructures
The recent discovery of nanometer-size whirling magnetic structures named magnetic skyrmions has opened a new path to manipulate magnetization at the nanoscale [1,2]. Magnetic skyrmions are characterized by a chiral and topologically non-trivial spin structure, i.e their magnetization texture cannot be continuously transformed into the uniform magnetic state without causing a singularity (see Fig.1). Skyrmions can […] >>
October 22 2019
Study of the charge current – spin current interconversion in Rashba-Edelstein interfaces and topological insulators surfaces
The conversion of a conventional charge current into a spin current, carrying not charges but angular momentum, can be done in non-magnetic systems using the spin-orbit coupling. Spin-dependent transport effects can thus be observed in very wide ranges of materials and interfaces, allowing spin manipulation in metals, oxides [1], semiconductors, Rashba interfaces, topological insulators, 2D […] >>
October 22 2019
Spintronic samples design and electron optics for in operando Magnetic imaging
Electron Holography is an advanced technique of Transmission Electron Microscopy that consists in reconstructing the full electron wave to access its phase. The phase of an electron wave is modulated by the presence of electro-magnetic fields that may be quantitatively mapped, once the phase is obtained. Beyond the possibility of describing magnetism (and more particularly […] >>
October 22 2019
Magnetic MRAM memory and magnetic field sensor: multi-functionality for 3D assembly
Magnetic non-volatile memory (MRAM) is a technology being developed at Spintec. This type of memory associates non-volatility with fast switching of the order of ns. Switching the magnetization direction the storage layer results in cell resistance changes that can be greater than 100%. This switching depends on the application of a current pulse and also […] >>