Tenfold reduction in ReRAM cell variability

A solution to the problem of excessive variability in ReRAM (resistive memory) could be found in Mott insulators, metals that conduct electricity in theory, but that turn out to be insulators.
To test their theory, researchers working on a joint project by CEA-Leti, LTM, and CNRS fabricated 15 x 300 nm2 memory cells, replacing the usual metal oxide with a Mott insulator.
The variability of their cells was ten times less than that of conventional cells—and low enough for particularly demanding use cases like data storage.
When a Mott insulator transitions from conductor to insulator, there is no displacement of atoms or change in the crystal structure, two of the culprits responsible for cell variability, which explains the improvement.
The researchers will now turn their attention to the synthesis and deposition of this unusual material, which remain tricky.

Contact: camille.giroud@cea.fr

Facebook

Twitter