News : Condensed matter physics, chemistry & nanosciences
January 01 2023
Operando monitoring of reaction heterogeneities in fast charging Na-ion batteries using synchrotron radiation: from micro and nano diffraction
Sodium-ion batteries can compete with Li-ion batteries for power applications, while being free of critical metals such as Co, Ni or Li. However, fast charging can lead to inter- and/or intra-particle reaction heterogeneities causing underutilisation of the electrode and/or mechanical degradation involving particle cracking. These complex non-equilibrium processes can have profound effects on the overall […] >>
January 01 2023
Study of the anisotropy of dopant and compositional gradients in the reference ternary alloy for infrared detection
This thesis concerns the field of HgCdTe infrared detectors for astrophysical applications, for which the Infrared Laboratory of CEA -Leti is a world leader. The student will join the infrared laboratory which includes the entire detector manufacturing process. He will produce the samples using the technological means of elaboration available in the Leti clean room. […] >>
January 01 2023
2D layers of chalcogenide materials growth by van der Waals epitaxy for frugal electronics
Non-volatile magnetic memories (MRAMs), such as STT-MRAMs (Spin-torque Transfer MRAMs), appear to be extremely promising devices for reducing the energy consumption of memories. In this context, a very strong spin-orbit coupling at room temperature has been demonstrated in 2D heterostructures of Tellurium-based chalcogenide materials opening the way to new energy-efficient devices. On the other hand, […] >>
January 01 2023
Modelling silicon/germanium spin qubits
Silicon/Germanium spin qubits have made outstanding progress in the past two years [Nature 591, 580 (2021); arXiv:2202.09252]. In these devices, the elementary information is stored as a coherent superposition of the spin states of an electron in a Si/SiGe heterostructure, or of a hole in a Ge/SiGe heterostructure. These spins can be manipulated electrically owing […] >>
January 01 2023
Deep investigation of GaN/dielectrics gate stack through ab-initio simulations (DFT)
MOS-HEMT devices have erased a lot of interest in the state of art and specifically for compact and high power density applications. Thanks to the presence of a high bi-dimensional gas electron (2deg) at the AlGaN/GaN heterojunction and the very promising GaN thermal resistance and high mobility, these transistors are capable of supporting high currents […] >>