News : Engineering sciences

January 01 2023

Development of artificial intelligence algorithms for narrow-band localization

Narrowband (NB) radio signals are widely used in the context of low power, wide area (LPWA) networks, which are one of the key components of the Internet-of-Things (NB-IoT). However, because of their limited bandwidth, such signals are not well suited for accurate localization, especially when used in a complex environment like high buildings areas or […] >>

January 01 2023

Antiferroelectric materials by ALD for MAFM capacitors

The post-doctoral researcher will focus on the investigation of AFE layers based on HfO2 and/or ZrO2 obtained by ALD (Atomic Layer Deposition), which will be able to work as high-k dielectrics for high-density antiferroelectric (AFE) capacitances (>20 J.cm-3). For understanding and optimizing the AFE capacitances, it is mandatory to relate the structural, micro-structural and chemical […] >>

January 01 2023

Cryo-CMOS electronics: Thermal and strain effects in FDSOI MOSFETs down to very low temperature

In the context of the development of the cryo-electronics, i.e. the extension of operation of digital or analog electronics to cryogenic temperatures, down to a few tens of mK, in particular for quantum applications, the aim of the post-doctoral project is to continue the effort of modeling and characterization of the FDSOI technology at low […] >>

January 01 2023

Optomechanical force probes development for high speed AFM

The proposed topic is part of a CARNOT project aiming at developing a new generation of force sensors based on optomechanical transduction. These force sensors will be implemented in ultrafast AFM microscopes for imaging and force spectroscopy. They will allow to address biological and biomedical applications on sub-microsecond or even nanosecond time scales in force […] >>

January 01 2023

Design of 2D Matrix For Silicum Quantum computing with Validation by Simulation

The objective is to design a 2D matrix structure for quantum computing on silicon in order to consider structures of several hundred physical Qubits. In particular the subject will be focused on: – The functionality of the structure (Coulomb interaction, RF and quantum) – Manufacturing constraints (simulation and realistic process constraint) – The variability of […] >>
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