News : Engineering sciences

The recent discovery of HfO2 ferroelectric properties generates a strong interest for novel non-volatile memory technologies. Among them, HfO2-based Ferroelectric Tunnel Junctions (FTJ) are resistive memories in which the electronic transport, and thus the device conductance, is modulated by the orientation of ferroelectric dipoles within the HfO2 layer. Actually, HfO2-based FTJs are envisaged for mimicking […] >>

For microelectronics industry, SOI (Silicon on Insulator) structure elaboration for the new generation of integrated circuits fabrication relies on wafer bonding by molecular adherence technology. It is based on direct bonding between two surfaces thanks to plasma activation. In the Ph.D.’s framework, we propose to study and to develop new activation processes by plasma in […] >>

The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>

In the history of semiconductors, the requirements in terms of device size have always followed a descending trend. Low thermal budget solutions are now key to manage these specifications. Within this context, nanosecond laser annealing stands as an excellent solution. Laser process conditions can be adjusted to the material structure. During heating and according to […] >>

Power electronics used in particular for the electric vehicle requires the fabrication of smaller and smaller devices able of sustaining high currents and high working voltages. The miniaturization of these components requires the development of new dielectric materials with high breakdown field. A promising approach is to combine the high dielectric constant of inorganic oxides […] >>