News : Technological challenges

January 01 2023

Neural Architecture Search for Binary Neural Networks on In-Memory Computing

Edge Artificial Intelligence and low-level Computer Vision is now massively deployed at the near-sensor level in order to further extend the capabilities of smart embedded imaging systems. This near-sensor intelligence typically allows 1000x gains by capping data transmission, thus improving energy efficiency. The In-Memory Computing (IMC) paradigm offers the opportunity to optimize processing architectures thanks […] >>

January 01 2023

X-ray attacks of new generation integrated circuits

CESTI is an Information Technology Security Evaluation Facility (ITSEF) laboratory dedicated to security evaluations of integrated circuits. During its evaluation process, various tests can be performed, amongst whose perturbation attacks. The latter consists in modifying chip behavior in order to get secret keys, to bypass authentication steps or to get rid of specific countermeasures. Laser, […] >>

January 01 2023

µLaue diffraction and excited luminescence in nitrides optoelectronics: physics, operando, serial crystallography

The Laue microdiffraction instrument (µLaue), installed at the European Synchrotron (ESRF) in Grenoble (BM32 beamline), is unique in Europe and probes the matter by diffracting a polychromatic X-ray beam of a few hundred nanometers. The acquisition of the Laue diffraction diagram is very fast and allows scanning the samples with high precision to get the […] >>

January 01 2023

3D interferometric imaging system with integrated optics

3D sensing by capturing depth images, is a key function in numerous emerging applications such as facial recognition, augmented reality, robotics or drones. CEA targets the development of an innovative 3D sensing module, inspired from frequency modulated Lidar, with simultaneous illumination of the whole scene. To miniaturize the system, the proposed PhD will focus on […] >>

December 15 2020

Development of Atomic Force Microscopy techniques for the characterization of piezoelectric semiconductor materials – Applications in energy conversion

Description of the project: Semiconductor piezoelectric nanowires (NWs) (GaN and ZnO among others) have improved piezoelectric properties compared to thin films and bulk materials, due to their greater flexibility and sensitivity to lower forces. An intrinsic improvement in piezoelectric coefficients has also been identified by recent theoretical and experimental studies [1, 2]. These NWs can […] >>
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