News : Technological challenges

January 01 2023

µLaue diffraction and excited luminescence in nitrides optoelectronics: physics, operando, serial crystallography

The Laue microdiffraction instrument (µLaue), installed at the European Synchrotron (ESRF) in Grenoble (BM32 beamline), is unique in Europe and probes the matter by diffracting a polychromatic X-ray beam of a few hundred nanometers. The acquisition of the Laue diffraction diagram is very fast and allows scanning the samples with high precision to get the […] >>

January 01 2023

Horizontal Magnetic Pulses and the Impact of Ultrafast Transient Current on Hardware Security of SoCs

Work carried out within the CEA-Leti has shown that physical attacks can be a threat to the security mechanisms of SoCs (System-On-Chips). Indeed, fault injections by electromagnetic disturbance have already led to an elevation of privileges by authenticating with an illegitimate password, or more recently have made it possible to circumvent one of the highest […] >>

January 01 2023

Energy efficiency and link security optimization by joint antenna processing and envelope reduction

The proposed research work is twofold: improving the energy efficiency of 5G/6G millimeter radio access network and securing radio links. Mixed solutions at the frontier between the definition of radio head architecture and signal processing algorithms will be proposed and assessed according to two criteria: the energy efficiency of the proposed solutions and the ability […] >>

January 01 2023

3D interferometric imaging system with integrated optics

3D sensing by capturing depth images, is a key function in numerous emerging applications such as facial recognition, augmented reality, robotics or drones. CEA targets the development of an innovative 3D sensing module, inspired from frequency modulated Lidar, with simultaneous illumination of the whole scene. To miniaturize the system, the proposed PhD will focus on […] >>

December 15 2020

Development of Atomic Force Microscopy techniques for the characterization of piezoelectric semiconductor materials – Applications in energy conversion

Description of the project: Semiconductor piezoelectric nanowires (NWs) (GaN and ZnO among others) have improved piezoelectric properties compared to thin films and bulk materials, due to their greater flexibility and sensitivity to lower forces. An intrinsic improvement in piezoelectric coefficients has also been identified by recent theoretical and experimental studies [1, 2]. These NWs can […] >>
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