News : Technological challenges

The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>

In this subjet we will develop off-axis electron holography for the measurement of electrostatic fields in AlGaN quantum well structures for UV emission. Electron holography measures the phase of electrons from an interference pattern. As the phase change of the electrons is proportional to the potentiel in the specimen, then this can be used to […] >>

The recent discovery of HfO2 ferroelectric properties generates a strong interest for novel non-volatile memory technologies. Among them, HfO2-based Ferroelectric Tunnel Junctions (FTJ) are resistive memories in which the electronic transport, and thus the device conductance, is modulated by the orientation of ferroelectric dipoles within the HfO2 layer. Actually, HfO2-based FTJs are envisaged for mimicking […] >>

Simulations using molecular dynamics (MD) are particularly suitable to study the physical properties of complex materials at the atomic scale but require an accurate description of their potential energy surface (PES). In the past couple of years, much progress has been made in the development of machine learning interatomic potentials (ML-IP) trained on ab initio […] >>

As the performances of the transistor are approaching their physical limits, developing semiconductor technology with novel concepts and materials is a major focus of the microelectronics research and industry. In recent years, MOSFETs fabricated with semiconducting 2D transition metal dichalcogenide (TMD) channels have been identified as promising candidates to reach the ultimate gate length scaling, […] >>