News :

MOS-HEMT devices have erased a lot of interest in the state of art and specifically for compact and high power density applications. Thanks to the presence of a high bi-dimensional gas electron (2deg) at the AlGaN/GaN heterojunction and the very promising GaN thermal resistance and high mobility, these transistors are capable of supporting high currents […] >>

Power electronics used in particular for the electric vehicle requires the fabrication of smaller and smaller devices able of sustaining high currents and high working voltages. The miniaturization of these components requires the development of new dielectric materials with high breakdown field. A promising approach is to combine the high dielectric constant of inorganic oxides […] >>

The SmartCut technology is nowdays widely used on the manufacture of innovative substrates such as SOI (Silicon-on-Insulator). The fundamental physical phenomena underlying this process are still being actively studied. In particular, the catastrophic fracture step, which allows the transfer of a very thin layer of a donor substrate onto a base or receiver substrate. An […] >>

As the performances of the transistor are approaching their physical limits, developing semiconductor technology with novel concepts and materials is a major focus of the microelectronics research and industry. In recent years, MOSFETs fabricated with semiconducting 2D transition metal dichalcogenide (TMD) channels have been identified as promising candidates to reach the ultimate gate length scaling, […] >>

This thesis concerns the field of HgCdTe infrared detectors for astrophysical applications, for which the Infrared Laboratory of CEA -Leti is a world leader. The student will join the infrared laboratory which includes the entire detector manufacturing process. He will produce the samples using the technological means of elaboration available in the Leti clean room. […] >>