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January 01 2023

Development of Smart Beamforming Architectures for 6G Telecommunication Systems

Over the past 20 years, wireless communication systems have continued to evolve and offer new services. Today, the success is such that the frequency bands below 10GHz are saturated and we are now turning to millimeter band frequencies. These frequencies offer the possibility to develop systems with higher data rates. However, they require beamforming to […] >>

January 01 2023

2D layers of chalcogenide materials growth by van der Waals epitaxy for frugal electronics

Non-volatile magnetic memories (MRAMs), such as STT-MRAMs (Spin-torque Transfer MRAMs), appear to be extremely promising devices for reducing the energy consumption of memories. In this context, a very strong spin-orbit coupling at room temperature has been demonstrated in 2D heterostructures of Tellurium-based chalcogenide materials opening the way to new energy-efficient devices. On the other hand, […] >>

January 01 2023

RF Cryo-CMOS/Superconductor circuits co-design

Quantum computing is nowadays a strong field of research at CEA-LETI and in numerous institutes and companies around the world. The Quantum Silicon Grenoble project, including CEA-LETI, CEA-IRIG and Néel Institut, aims to achieve a quantum computer based on quantum bits (qubits) in silicon. The operating conditions of qubits (cryogenic temperatures = 1K, high frequencies […] >>

January 01 2023

Localized selective deposition of oxides for microelectronics

In order to reduce the manufacturing costs of integrated circuits and continue their miniaturization, disruptive approaches based on the use of selective deposition processes are now being considered in addition to photolithography. Recent developments are mostly linked to the use of atomic layer deposition (ALD) which is a very suitable technique for the development of […] >>

January 01 2023

Growth of High Quality 2D Hexagonal Boron Nitride on a Liquid Metal Catalyst

Two-dimensional (2D) materials are crystals of one or a few atoms in thickness with high stability and physical properties governed by extreme quantum confinement. Due to its unique crystal structure, graphene exhibits a plethora of unconventional electronic phenomena. Hexagonal boron nitride (h-BN) shares the same crystal lattice but has different properties. For example, it is […] >>
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