Transistors: GaN enters the spotlight

Gallium nitride (GaN) is fi nally giving silicon a run for its money for use in power transistors capable of switching hundreds of volts. What has changed? Until now, GaN fabrication processes were simply cost prohibitive. Researchers at Leti are on the verge of overcoming cost concerns with their recent 650 V “normally-on” transistor, fabricated on a 200 mm GaNon- silicon wafer using CMOS-compatible processes— two choices that will bring costs down substantially, while reducing the leakage current inherent to GaN.
The research focused on epitaxial growth of a high-quality material. Ten patents have been fi led, and the researchers are pursuing improvements to the components in joint R&D with Renault with the intention of transferring the technology by end-2016.

Contact: marc.plissonnier@cea.fr

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