Innovative 3D Technology of a nonvolatile memory cell for In-Memory-Computing

Context:
This internship, performed in the framework of an ambitious European project, aims to provide for the first time a powerful and viable technological solution consisting in processing the information inside or close to the memory circuit block (also known as « In-Memory Computing »). Thanks to this new solution, a new class of nano-technology mixing a high capacity of non-volatile resistive memory coupled with nanowire transistors is proposed to perform data-centric computations while reducing significantly the power consumption.

Work to be performed:
The student will contribute to the optimization of a compact memory cell made from silicon (Si) nanowires. Different steps will be investigated during this project. First, physical/chemical characterization (Transmission Electron Microscopy, Energy Dispersive X-ray analysis) and electrical measurement of the resistive RAM memory will be performed. Different materials will be studied in order to optimize the oxide based RRAM. In a second step, the selector of the memory cell (nanowire-based MOSFET transistor) will be electrically characterized. The electronic transport properties will be extracted over a wide range of temperature (from 300K up to 4K). Finally, the electrical functionality of the 1T1R elementary memory cell will have to be demonstrated and analyzed in order to optimize the key features (current, voltage, time, frequency) which are directly related to the performance of the memory cell (memory window, endurance and retention). This will allow to identify the most appropriate materials and technological processes.
This work will be done in close collaboration between the laboratories of electrical characterization and technological integration.

If you are interested by the internship, please send your CV and a motivation letter to  sylvain.barraud@cea.fr

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