Integration of a resistive memory with a back-end selector in FDSOI 28nm node for In Memory Computing applications

Context :
The near future is Internet of Things (IoT), with the need of a data storage infrastructure allowing Big Data processing and Artificial Intelligence (AI) applications. The Memory Laboratory in CEA-LETI is developing the next generations of Non-Volatile Memories, and among them Cross Bar structure based on ReRAM + OTS selector is very promising. While first demonstration has been done at cell level, matrix demonstration has not been demonstrated yet. The target is on 28 nm technology node that offer a great compromised between advanced node and flexibility of integration.

Objectives
In this internship, we propose to integrate a resistive memory (OxRAM) with a back-end Selector (OTS-type) in 28nm technology with 12 inches platform for In Memory Computing applications. To this aim, LETI MAD300 test vehicle will be used. The RRAM and the OTS will be integrated in the BEOL on top of a 28nm FDSOI technology. Integration schemes will be defined and analyzed, in terms of risk and ease of fabrication. Key integration steps (among them memory point dimension, stack etching, contamination…) will be addressed and discussed. Memory dot will be accurately designed based on RRAM and OTS intrinsic properties in order to target device features (operating voltages, current, ON and OFF resistances, memory leakage current…) compatible with 28nm technology in a crossbar array. Process flow will be finalized using commercial tools, so that integration can be achieved in LETI cleanroom, using 300mm test vehicle and platform.

If you are interested by the internship, please send your CV and a motivation letter to gabriel.molas@cea.fr

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