investigation of the relationship between morphology and RF properties of polycrystalline Si layers for 5G applications

Context:
A significant part of RF Front End Modules is integrated on RFSOI substrates that help preserve signal integrity. Under their buried oxide layer, these substrates feature a high-resistivity polycrystalline Si layer. In commercially available products, this layer is deposited and planarized. Two innovative alternative approaches are being investigated in Leti to fabricate this layer.
The purpose of this internship is to determine the relationship between process conditions,  material morphology and RF performance for these two approaches.

Internship content :
-Contribute to sample elaboration
-Evaluate crystallite size (XRD),
-Measure RF properties (linearity, S parameters, effective resistivity),
-Perform electromagnetic simulation in order to explain the measured performance.

If you are interested by the internship, please send your CV and motivation letter to emmanuel.augendre@cea.fr

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