News : DCOS

The objective is to design a 2D matrix structure for quantum computing on silicon in order to consider structures of several hundred physical Qubits. In particular the subject will be focused on: – The functionality of the structure (Coulomb interaction, RF and quantum) – Manufacturing constraints (simulation and realistic process constraint) – The variability of […] >>

The energy cost associated to moving data across the memory hierarchy has become a limiting factor in modern computing systems. To mitigate this trend, novel computing architectures favoring a more local and parallel processing of the stored information are proposed, under the labels « Near/In-Memory Computing » or « Processing In Memory ». Substantial benefits […] >>

The recent discovery of HfO2 ferroelectric properties generates a strong interest for novel non-volatile memory technologies. Among them, HfO2-based Ferroelectric Tunnel Junctions (FTJ) are resistive memories in which the electronic transport, and thus the device conductance, is modulated by the orientation of ferroelectric dipoles within the HfO2 layer. Actually, HfO2-based FTJs are envisaged for mimicking […] >>

Simulations using molecular dynamics (MD) are particularly suitable to study the physical properties of complex materials at the atomic scale but require an accurate description of their potential energy surface (PES). In the past couple of years, much progress has been made in the development of machine learning interatomic potentials (ML-IP) trained on ab initio […] >>

The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>