News : DCOS

Improving the performance of power electronics components is a major challenge for reducing our energy consumption. Diamond appears as the ultimate candidate for power electronics. However, the small dimensions and the price of the substrates are obstacles to the use of this material. The main objective of the work is to overcome these two difficulties […] >>

The energy cost associated to moving data across the memory hierarchy has become a limiting factor in modern computing systems. To mitigate this trend, novel computing architectures favoring a more local and parallel processing of the stored information are proposed, under the labels « Near/In-Memory Computing » or « Processing In Memory ». Substantial benefits […] >>

The recent discovery of HfO2 ferroelectric properties generates a strong interest for novel non-volatile memory technologies. Among them, HfO2-based Ferroelectric Tunnel Junctions (FTJ) are resistive memories in which the electronic transport, and thus the device conductance, is modulated by the orientation of ferroelectric dipoles within the HfO2 layer. Actually, HfO2-based FTJs are envisaged for mimicking […] >>

Simulations using molecular dynamics (MD) are particularly suitable to study the physical properties of complex materials at the atomic scale but require an accurate description of their potential energy surface (PES). In the past couple of years, much progress has been made in the development of machine learning interatomic potentials (ML-IP) trained on ab initio […] >>

The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>