News : DCOS
January 01 2023
Advanced biological functionalization for graphene biological sensors on flexible subtrate
The need for biological sensing solutions is constantly growing. Amid targeted applications, some require biosensor with high sensitivity. At CEA LETI we are running a project that aim at developing novel innovative wound dressing equipped with graphene biological sensors to track wound bacterial proliferation indicative of sepsis. The sensor is a Solution gated graphene FET-like […] >>
January 01 2023
DTCO analysis of MRAM for In/Near-Memory Computing
The energy cost associated to moving data across the memory hierarchy has become a limiting factor in modern computing systems. To mitigate this trend, novel computing architectures favoring a more local and parallel processing of the stored information are proposed, under the labels « Near/In-Memory Computing » or « Processing In Memory ». Substantial benefits […] >>
January 01 2023
Ferroelectric Tunnel Junctions for neuromorphic applications
The recent discovery of HfO2 ferroelectric properties generates a strong interest for novel non-volatile memory technologies. Among them, HfO2-based Ferroelectric Tunnel Junctions (FTJ) are resistive memories in which the electronic transport, and thus the device conductance, is modulated by the orientation of ferroelectric dipoles within the HfO2 layer. Actually, HfO2-based FTJs are envisaged for mimicking […] >>
January 01 2023
Thermal and phase transition properties of van der Waals heterostructures by equivariant graph neural networks
Simulations using molecular dynamics (MD) are particularly suitable to study the physical properties of complex materials at the atomic scale but require an accurate description of their potential energy surface (PES). In the past couple of years, much progress has been made in the development of machine learning interatomic potentials (ML-IP) trained on ab initio […] >>
January 01 2023
Ferroelectric field effect transistor (FeMFET) for multi-bit per cell memories and in-memory computing applications
The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>