News : IRIG

This internship project aims on unveiling microscopic mechanisms of spin-orbit phenomena including perpendicular magnetic anisotropy in order to help optimizing spin-based memory applications and provide the scientific underpinnings of next generation energy efficient, ultrafast and ultrasmall spintronic devices. >>

Recent progress in domain wall nucleation and its control in nanostructures with tubular shape [see Figure 1] makes them fascinating objects for fundamental research as well as for data storage advanced technologies. In these systems the interplay between magnetization and 3D properties results in novel physical phenomena such as unconventional spin textures, additional energy terms […] >>

Spin electronics is a merging of microelectronics and magnetism which aims at taking advantage of the best of the two worlds. Magnetism is very appropriate for memory functions since it allows encoding information in a nonvolatile way via the direction of magnetization of magnetic nanostructures. Magnetic memory called MRAM (Magnetic Random Access Memories) are about […] >>

Nanostructures of the magnetic 3D topological insulators MnBi2Te4 and MnBi4Te7 are candidates to realize novel chiral electronic states, similar to the quantum Hall state, but without the need of magnetic fields. The modification of the band structure by the exchange interaction is also predicted to generate axion insulators, with topological properties that can be tuned […] >>

The recent discovery of nanometer-size whirling magnetic structures named magnetic skyrmions has opened a new path to manipulate magnetization at the nanoscale [1,2]. Magnetic skyrmions are characterized by a chiral and topologically non-trivial spin structure, i.e their magnetization texture cannot be continuously transformed into the uniform magnetic state without causing a singularity (see Fig.1). Skyrmions can […] >>