News : PHELIQS

January 01 2023

Strain driven Group IV photonic devices: applications to light emission and detection

Straining the crystal lattice of a semiconductor is a very powerful tool enabling controlling many properties such as its emission wavelength, its mobility…Modulating and controlling the strain in a reversible fashion and in the multi% range is a forefront challenge. Strain amplification is a rather recent technique allowing accumulating very significant amounts of strain in […] >>

January 01 2023

Superconductivity in systems with local inversion symmetry breaking

Global inversion symmetry or time reversal symmetry have been long regarded as fundamental ingredients to form a superconducting state. However nowadays, several systems have been found which are superconducting even though they break locally inversion symmetry, sometimes together with broken time reversal symmetry. Prominent examples are the uranium based ferromagnetic superconductors URhGe and UCoGe (breaking […] >>

January 01 2023

Group IV single photon detectors

Detection of single photons boosted the development of quantum information processing, as well as finding a wide range of applications in astronomy, sensing, metrology, LiDAR, and biosensing technologies.(1) Single photon detectors (SPDs) require high quantum efficiency (>90%), low dark count rates, and ultra-fast response. State of the art superconducting nanowire SPD (SNSPD) can deliver superior […] >>

January 01 2023

Topological magnetic phases in quantum materials

We propose an experimental and fundamental research project which will explore different types of magnetic materials (EuPtSi, Gd2PdSi3, MnP, CrAs) with exotic magnetic states (skyrmion and helimagnet states). The goal is to use mainly thermoelectric effects under extreme conditions (low temperature, high magnetic field and high pressure), to characterize these exotic spin textures, understand the […] >>

August 26 2022

Strain driven Group IV photonic devices: applications to light emission and detection

Straining the cristal lattice of a semiconductor is a very powerfull tool enabling controlling many properties such as its emission wavelength, its mobility…Making strain amplification microstructures is a rather recent technique allowing accumulating very significant amounts of strain in a micronic constriction, such as a microbridge (up to 4.9% for Ge [1]), which deeply drives […] >>
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