News : SPINTEC
January 01 2023
Unconventional topological spin textures in spintronics
This thesis focuses on the study of unconventional topological spin textures present in antiferromagnetic thin film materials. In the field of spintronics, spin correlations have attracted considerable attention, facilitating progress in fundamental physics and the development of new applications. Some effects, such as the topological Hall effect, are related to the specific local arrangement of […] >>
January 01 2023
Addressing retention and write bottlenecks for sub-10nm MRAM magnetic memory cells
Magnetic random access memories (MRAMs) are now on the market, in FPGAs or cache memory blocks. The concept of Perpendicular Shape Anisotropy MRAM (PSA) has been proposed to expand the MRAM market: the usual ultra-thin storage layer being replaced by a vertical magnetic pillar, allowing retention to be maintained at <10nm size and at high […] >>
January 01 2023
Proximity effects between 2D materials and ferroelectrics
For their atomic thinness and exceptional electronic properties, 2D materials like graphene and transition metal dichalcogenides (TMD) are promising materials to build new compact and energy efficient electronic and spintronic devices. A key property of those materials is their two dimensional character which makes them highly sensitive to their environment. Thus, it offers the key […] >>
October 22 2019
Micromagnetic study of a voltage controlled skyrmion chirality switch
Skyrmions in thin films are spin textures across which the magnetization follows a cycloid with a unique sense of rotation, known as chirality. These specific magnetic patterns can be stabilized in various kinds of materials, and particularly in ultrathin trilayers with no inversion symmetry (e.g. heavy metal/ferromagnet/oxide) exhibiting simultaneously an interfacial interaction called Dzyaloshinskii-Moriya (DMI) […] >>
October 22 2019
Theoretical studies of spin-orbit phenomena at interfaces comprising magnetic and nonmagnetic materials in a view of memory devices
This internship project aims on unveiling microscopic mechanisms of spin-orbit phenomena including perpendicular magnetic anisotropy in order to help optimizing spin-based memory applications and provide the scientific underpinnings of next generation energy efficient, ultrafast and ultrasmall spintronic devices. >>